Prof Zhang Zhiyong's team at Peking University developed a heterojunction-gated field-effect transistor (HGFET) that achieves high sensitivity in short-wave infrared detection, with a recorded specific detectivity above 1014 Jones at 1300 nm, making it capable of starlight detection. Their research was recently published in the journal Advanced Materials, titled "Opto-Electrical Decoupled Phototransistor for Starlight Detection."
